Interconnect technologies in high bandwidth memory (HBM) are evolving, with two main directions: microbump technology and hybrid bonding.
Both technologies aim to address the requirements of next-generation HBM, including increased I/O density, higher bandwidth, and improved performance.
As data rates rise, the need for increased output contact pad density grows, pushing bump technologies beyond their previously thought physical and performance limits.
Some memory designers are innovating to achieve bump sizes below 10µm in high-volume manufacturing.
With data rates rising, the need for increased output contact pad density is needed.
Authors: Damon Tsai, Woo Young Han, and Tim Kryman.
Summary: Innovations in interconnect technology for high bandwidth memory.